winbond

winbond
winbond

 

Founded in September 1987 and listed  on the Taiwan Stock Exchange in 1995 (STE : 2344), Winbond is headquartered in Central Taiwan Science Park, Taichung, Taiwan. Winbond's 12-inch fab, a factory with a high level of intelligent technology and automation, is located in Taichung Science Park. Winbond is a specialty memory IC company. From product design, R&D and wafer fabrication to branded product marketing, Winbond strives to provide total memory solutions to its global customers. Winbond's major product lines include Code Storage Flash Memory, TrustME® Secure Flash, Specialty DRAM and Mobile DRAM. The company is the only one in Taiwan with the capability to develop DRAM and FLASH products in-house.

Winbond Product Portfolio Overview

Winbond Electronics - Mobile DRAM

HYPERRAM

Winbond HYPERRAM™ products provide a compact alternative to traditional pseudo-SRAM in IoT and consumer devices, automotive and industrial equipment. HYPERRAM™ enables even greater capacity, higher speed, and smaller form factor. It also offers the advantage of simplified operational usage.

winbond

 

Density

 

 

Speed

 

 

Data Width

 

 

Package

 

 

Operating Temp

 

 

Automotive

 

 

Voltages

 

 

32Mb

 

 

200MHz

 

 

x8

 

 

24 TFBGA

 

 

-40~85C

 

 

Yes

 

 

1.8V

 

 

32Mb

 

 

200MHz

 

 

x8

 

 

24 TFBGA

 

 

-40~85C

 

 

Yes

 

 

3V

 

 

64Mb

 

 

200MHz

 

 

x8

 

 

WLCSP

 

 

-40~85C

 

 

-

 

 

1.8V

 

 

64Mb

 

 

200MHz

 

 

x8

 

 

24 TFBGA

 

 

-40~85C

 

 

Yes

 

 

1.8V

 

 

64Mb

 

 

200MHz

 

 

x8

 

 

24 TFBGA

 

 

-40~85C

 

 

Yes

 

 

3V

 

 

128Mb

 

 

200MHz

 

 

x8

 

 

24 TFBGA

 

 

-40~85C

 

 

Yes

 

 

1.8V

 

 

128Mb

 

 

200MHz

 

 

x8

 

 

24 TFBGA

 

 

-40~85C

 

 

Yes

 

 

3V

 

 

128Mb

 

 

200MHz

 

 

x16

 

 

49 WFBGA

 

 

-40~85C

 

 

-

 

 

1.35V-1.8V

 

 

128Mb

 

 

200MHz

 

 

x16

 

 

WLCSP

 

 

-40~85C

 

 

-

 

 

1.35V-1.8V

 

 

256Mb

 

 

200MHz / 250MHz

 

 

x8

 

 

24 TFBGA

 

 

-40~85C

 

 

Yes

 

 

1.8V

 

 

256Mb

 

 

200MHz

 

 

x8

 

 

WLCSP

 

 

-40~85C

 

 

-

 

 

1.8V

 

 

256Mb

 

 

200MHz

 

 

x16

 

 

WLCSP

 

 

-40~85C

 

 

-

 

 

1.8V

 

 

256Mb

 

 

200MHz / 250MHz

 

 

x16

 

 

49 WFBGA

 

 

-40~85C

 

 

-

 

 

1.8V

 

 

512Mb

 

 

200MHz / 250MHz

 

 

x8

 

 

24 TFBGA

 

 

-40~85C

 

 

Yes

 

 

1.8V

 

 

512Mb

 

 

200MHz / 250MHz

 

 

x8

 

 

49 WFBGA

 

 

-40~85C

 

 

-

 

 

1.8V

 

Watch Winbond Webinar to... ...Become an expert in HYPERRAM!

Low Power DRAM

Winbond mobile DRAM devices support both x16 and x32 data widths. Major features for the families of products shown in the table below include the following : Sequential or Interleave burst, High Clock rat, Standard Self Refresh, Partial-Array Self Refresh (PASR), Automatic Temperature Compensated Self Refresh Rate (ATCSR), Deep Power-Down (DPD), and Programmable output buffer driver strength.

windbond-low-power

 

Mode

 

 

Density

 

 

Description

 

 

Package

 

 

Automotive

 

 

PSRAM

 

 

64Mb

 

 

X16, ADM 1.8V, 133/166Mbps(SDR), 200/266/333Mbps(DDR)

 

 

BGA49

 

 

-

 

 

LPSDR/DDR

 

 

256Mb

 

 

X16 1.8V, 333/400Mbps(DDR)

 

 

BGA60

 

 

-

 

 

LPSDR/DDR

 

 

512Mb

 

 

X16, x32 1.8V, 133/166Mbps(SDR), 333/400Mbps(DDR)

 

 

BGA54, BGA60, BGA90

 

 

Yes

 

 

LPSDR/DDR

 

 

1Gb

 

 

X16, x32 1.8V, 333/400Mbps(DDR)

 

 

BGA60, BGA90

 

 

Yes

 

 

LPDDR2

 

 

512Mb

 

 

X16, x32 1.8/1.2V, 667/800/1066Mbps

 

 

BGA134

 

 

Yes

 

 

LPDDR2

 

 

1Gb

 

 

X16, x32 1.8/1.2V, 667/800/1066Mbps

 

 

BGA134

 

 

Yes

 

 

LPDDR2

 

 

2Gb

 

 

X16, x32 1.8/1.2V, 667/800/1066Mbps

 

 

BGA134

 

 

Yes

 

 

LPDDR3

 

 

512Mb (1)

 

 

X16, 1.8/1.2V, 1600/1866/2133Mbps

 

 

BGA178

 

 

-

 

 

LPDDR3

 

 

1Gb

 

 

X16, x32 1.8/1.2V, 1600/1866/2133Mbps

 

 

BGA178

 

 

-

 

 

LPDDR4/4x

 

 

1Gb

 

 

SDP, x16, 1.8/1.1/1.1V (LPDDR4), 1.8/1.1V/0.6V (LPDDR4X), 3200/3733/4266Mbps

 

 

BGA100, GBA200

 

 

Yes

 

 

LPDDR4/4x

 

 

2Gb

 

 

SDP, x16, 1.8/1.1/1.1V (LPDDR4), 1.8/1.1V/0.6V (LPDDR4X), 3200/3733/4266Mbps

 

 

BGA100, GBA200

 

 

Yes

 

 

LPDDR4/4x

 

 

2Gb

 

 

DDP, x32, 1.8/1.1/1.1V (LPDDR4), 1.8/1.1V/0.6V (LPDDR4X), 3200/3733/4266Mbps

 

 

BGA200

 

 

Yes

 

 

LPDDR4/4x

 

 

4Gb (2)

 

 

SDP, x16, 1.8/1.1/1.1V (LPDDR4), 1.8/1.1V/0.6V (LPDDR4X), 3200/3733/4266Mbps

 

 

BGA100, GBA200

 

 

-

 

 

LPDDR4/4x

 

 

4Gb

 

 

DDP, x32, 1.8/1.1/1.1V (LPDDR4), 1.8/1.1V/0.6V (LPDDR4X), 3200/3733/4266Mbps

 

 

BGA200

 

 

Yes

 

 

LPDDR4/4x

 

 

8Gb (2)

 

 

DDP, x32, 1.8/1.1/1.1V (LPDDR4), 1.8/1.1V/0.6V (LPDDR4X), 3200/3733/4266Mbps

 

 

BGA200

 

 

-

 

Note 1 : 512Mb LPDDR3 sample ready on 2024

Note 2 : SPD 4Gb LPDDR4/4X sample ready on 2024; DDP 8Gb LPDDR4/4X sample ready on 2024

Winbond Electronics - Specialty DRAM

Specialty DRAM

Winbond’s Specialty DRAM, focusing on low and middle density, features characteristics of high performance and high speed and is widely used by leaders in the consumer, communication, computer peripheral, industrial, and automobile markets. Completed solution can be provided to variety customers.

SDR, DDR, DDR2, and DDR3 support for Industrial and automotive application with AEC-Q100, TS16949, ISO9001/14001, OHSAS18001 certificates.

windbond-ddr4

 

Mode

 

 

Density

 

 

Description

 

 

Package

 

 

Automotive

 

 

DDR3/3L

 

 

1Gb

 

 

X8, x16 1.5V or 1.35V 1866/2133Mbps

 

 

BGA78 BGA96

 

 

Yes

 

 

DDR3/3L

 

 

2Gb

 

 

X8, x16 1.5V or/and 1.35V 1866/2133Mbps

 

 

BGA78 BGA96

 

 

Yes

 

 

DDR3/3L

 

 

4Gb

 

 

X8, x16 1.5V or/and 1.35V 1866/2133Mbps

 

 

BGA78 BGA96

 

 

Yes

 

 

DDR3/3L

 

 

8Gb

 

 

X16 DDP 1.5V and 1.35V 1866/2133Mbps

 

 

BGA96

 

 

-

 

 

DDR4 (1)

 

 

4Gb

 

 

X8, x16 1.2V 2666/3200Mbps

 

 

BGA78 BGA96

 

 

-

 

 

DDR4 (1)

 

 

8Gb

 

 

X8, x16 1.2V 2666/3200Mbps

 

 

BGA78 BGA96

 

 

-

 

 

DDR4 (1)

 

 

64Mb

 

 

X16 2.5V/3.3V 166/200Mbps

 

 

TSOP54 BGA54

 

 

Yes

 

 

SDRAM

 

 

128Mb

 

 

X16 2.5V/3.3V 166/200Mbps

 

 

TSOP54 BGA54

 

 

Yes

 

 

SDRAM

 

 

128Mb

 

 

X32(DDP) 2.5V/3.3V 166/200Mbps

 

 

BGA90

 

 

Yes

 

 

SDRAM

 

 

256Mb

 

 

X16 2.5V/3.3V 166/200Mbps

 

 

TSOP54 BGA54

 

 

Yes

 

 

SDRAM

 

 

256Mb

 

 

X32(DDP) 2.5V/3.3V 166/200Mbps

 

 

BGA90

 

 

Yes

 

 

DDR

 

 

64Mb

 

 

X16 2.5V 333/400Mbps

 

 

TSOP66

 

 

Yes

 

 

DDR

 

 

128Mb

 

 

X16 2.5V 333/400Mbps

 

 

TSOP66

 

 

Yes

 

 

DDR

 

 

256Mb

 

 

X16 2.5V 333/400Mbps

 

 

TSOP66

 

 

Yes

 

 

DDR2

 

 

128Mb

 

 

X16 1.8V 667/800/1066Mbps

 

 

BGA84

 

 

Yes

 

 

DDR2

 

 

256Mb

 

 

X8, X16 1.8V 667/800/1066Mbps

 

 

BGA60 BGA84

 

 

Yes

 

 

DDR2

 

 

512Mb

 

 

X8, X16 1.8V 667/800/1066Mbps

 

 

BGA60 BGA84

 

 

Yes

 

 

DDR2

 

 

512Mb

 

 

X8, X16 1.8V 667/800/1066Mbps

 

 

BGA60 BGA84

 

 

Yes

 

 

DDR2

 

 

1Gb

 

 

X8, X16 1.8V 667/800/1066Mbps

 

 

BGA60 BGA84

 

 

Yes

 

 

DDR2

 

 

2Gb

 

 

X8, X16 1.8V 667/800/1066Mbps

 

 

BGA60 BGA84

 

 

Yes

 

Note 1 : 4Gb DDR4 sample ready on 2024; 8Gb DDR4 sample ready on 2025

Winbond Electronics - Security Flash

TrustME®

Winbond TrustME® Secure Flash products strengthen the robustness by securing code and data storage for trusted boot and firmware updates using external secure flash. In an increasingly security conscious world, robust solutions for trusted boot and firmware updates are indispensable to IoT security foundation. Winbond’s Common Criteria certified production site guarantees secured production, software programming, and key provisioning for connected systems.

windbond-trustme

 

Product

 

 

Density

 

 

Security Level

 

 

W77Q

 

 

16Mb, 32Mb, 64Mb, 128Mb

 

 

- CC EAL 2+ - SESIP Level 2 (with IEC 62443 and NIST 8259A ready) - ISO 26262 ASIL-C ready - ISO 21434 - FIPS 140-3 ACVTS - FIPS 140-3 CMVP

 

 

W75F

 

 

4MB, 16Mb, 32Mb

 

 

- CC EAL 5+, PP0117 complaint - PSA Certified Level 2 ready - SESIP Level 3 + Physical Attacker - ISO 26262 ASIL-D

 

 

W76S

 

 

16Mb, 32Mb

 

 

- CC EAL 5+ - EMVCo - CFNR

 

Watch Winbond Webinar to... ...Become an expert in HYPERRAM!

Winbond Electronics - Code Storage Flash

Serial NOR Flash 3V

 

Voltage

 

 

Density

 

 

Description

 

 

Automotive

 

 

3V

 

 

2Mb

 

 

Dual SPI, 104MHz

 

 

Yes

 

 

3V

 

 

2Mb

 

 

Quad SPI, 104MHz

 

 

Yes

 

 

3V

 

 

4Mb

 

 

Quad SPI, QPI, 133MHz, DTR

 

 

Yes

 

 

3V

 

 

4Mb

 

 

Dual SPI, 104MHz

 

 

Yes

 

 

3V

 

 

4Mb

 

 

Quad SPI, 104MHz

 

 

Yes

 

 

3V

 

 

8Mb

 

 

Quad SPI, QPI, 133MHz, DTR

 

 

Yes

 

 

3V

 

 

8Mb

 

 

Quad SPI, 104MHz

 

 

Yes

 

 

3V

 

 

16Mb

 

 

Quad SPI, QPI, 133MHz, DTR

 

 

Yes

 

 

3V

 

 

32Mb

 

 

Quad SPI, QPI, 133MHz, DTR

 

 

Yes

 

 

3V

 

 

64Mb

 

 

Quad SPI, QPI, 133MHz, DTR

 

 

Yes

 

 

3V

 

 

128Mb

 

 

Quad SPI, QPI, 133MHz, DTR

 

 

Yes

 

 

3V

 

 

256Mb

 

 

Quad SPI, QPI, 133MHz, DTR

 

 

Yes

 

 

3V

 

 

512Mb

 

 

Quad SPI, QPI, 133MHz, DTR

 

 

Yes

 

 

3V

 

 

1Gb

 

 

Quad SPI, QPI, 133MHz, DTR

 

 

Yes

 

 

3V

 

 

2Gb

 

 

Quad SPI, QPI, 133MHz, DTR

 

 

Yes

 

Serial NOR Flash 1.8V

 

Voltage

 

 

Density

 

 

Description

 

 

Automotive

 

 

1.8V

 

 

4Mb

 

 

Quad SPI, 104MHz

 

 

Yes

 

 

1.8V

 

 

2Mb

 

 

Quad SPI, 104MHz

 

 

Yes

 

 

1.8V

 

 

8Mb

 

 

Quad SPI, 104MHz

 

 

Yes

 

 

1.8V

 

 

16Mb

 

 

Quad SPI, QPI, 133MHz, DTR

 

 

Yes

 

 

1.8V

 

 

32Mb

 

 

Quad SPI, QPI, 133MHz, DTR

 

 

Yes

 

 

1.8V

 

 

64Mb

 

 

Quad SPI, QPI, 133MHz, DTR

 

 

Yes

 

 

1.8V

 

 

128Mb

 

 

Quad SPI, QPI, 133MHz, DTR

 

 

Yes

 

 

1.8V

 

 

256Mb

 

 

Quad SPI, QPI, 133MHz, DTR

 

 

Yes

 

 

1.8V

 

 

512Mb

 

 

Quad SPI, QPI, 133MHz, DTR

 

 

Yes

 

 

1.8V

 

 

1Gb

 

 

Quad SPI, QPI, 133MHz, DTR

 

 

Yes

 

 

1.8V

 

 

2Gb

 

 

Quad SPI, QPI, 133MHz, DTR

 

 

Yes

 

Serial NOR Flash 1.2V

 

Voltage

 

 

Density

 

 

Description

 

 

Automotive

 

 

1.2V

 

 

8Mb

 

 

Quad SPI, QPI, 80MHz

 

 

-

 

 

1.2V

 

 

16Mb

 

 

Quad SPI, QPI, 80MHz

 

 

-

 

 

1.2V

 

 

32Mb

 

 

Quad SPI, QPI, 80MHz

 

 

-

 

 

1.2V

 

 

64Mb

 

 

Quad SPI, QPI, 80MHz

 

 

-

 

 

1.2V

 

 

128Mb

 

 

Quad SPI, QPI, 80MHz

 

 

-

 

 

1.2V

 

 

256Mb

 

 

Quad SPI, QPI, 80MHz

 

 

-

 

 

1.2V

 

 

512Mb

 

 

Quad SPI, QPI, 80MHz

 

 

-

 

RPMC SpiFlash®

 

Density

 

 

Description

 

 

Automotive

 

 

64Mb

 

 

1.8V, Quad SPI, QPI, RPMC, 104MHz

 

 

-

 

 

64Mb

 

 

3V, Quad SPI, QPI, RPMC, 104MHz

 

 

-

 

 

128Mb

 

 

1.8V, Quad SPI, QPI, RPMC, 104MHz

 

 

-

 

 

128Mb

 

 

3V, Quad SPI, QPI, RPMC, 104MHz

 

 

-

 

 

256Mb

 

 

1.8V, Quad SPI, QPI, RPMC, 104MHz

 

 

-

 

 

256Mb

 

 

3V, Quad SPI, QPI, RPMC, 104MHz

 

 

-

 

 

512Mb

 

 

1.8V, Quad SPI, QPI, RPMC, 104MHz

 

 

-

 

 

512Mb

 

 

3V, Quad SPI, QPI, RPMC, 104MHz

 

 

-

 

Octal Flash Family

 

Flash

 

 

Density

 

 

Description

 

 

Automotive

 

 

NAND

 

 

1Gb

 

 

1.8V, Octal SPI, DTR, 120MHz

 

 

Yes

 

 

NAND

 

 

2Gb

 

 

1.8V, Octal SPI, DTR, 120MHz

 

 

Yes

 

 

NAND

 

 

4Gb

 

 

1.8V, Octal SPI, DTR, 120MHz

 

 

Yes

 

 

NOR

 

 

512Mb

 

 

1.8V, Octal SPI, DTR, 200MHz

 

 

Yes

 

 

NOR

 

 

1Gb

 

 

1.8V, Octal SPI, DTR, 200MHz

 

 

Yes

 

 

NOR

 

 

2Gb

 

 

1.8V, Octal SPI, DTR, 200MHz

 

 

Yes

 

SpiStack Flash® Family

 

NOR

 

 

NAND

 

 

Description

 

 

Automotive

 

 

16Mb

 

 

1Gb

 

 

1.8V 104MHz, Continuous Read

 

 

-

 

 

16Mb

 

 

1Gb

 

 

3V 104MHz, Continuous Read

 

 

-

 

 

32Mb

 

 

1Gb

 

 

1.8V 104MHz, Continuous Read

 

 

-

 

 

32Mb

 

 

1Gb

 

 

3V 104MHz, Continuous Read

 

 

-

 

 

64Mb

 

 

1Gb

 

 

1.8V 104MHz, Continuous Read

 

 

-

 

 

64Mb

 

 

1Gb

 

 

3V 104MHz, Continuous Read

 

 

-

 

 

128Mb

 

 

1Gb

 

 

1.8V 104MHz, Continuous Read

 

 

-

 

 

128Mb

 

 

1Gb

 

 

3V 104MHz, Continuous Read

 

 

-

 

 

512Mb (256Mbx2)

 

 

 

 

 

1.8V, Quad SPI, QPI, DTR, 104MHz

 

 

-

 

 

512Mb (256Mbx2)

 

 

 

 

 

3V, Quad SPI, QPI, DTR, 104MHz

 

 

-

 

QspiNAND Flash

 

Density

 

 

Description

 

 

Automotive

 

 

512Mb

 

 

1.8V, QspiNAND

 

 

Yes

 

 

512Mb

 

 

3V, QspiNAND

 

 

Yes

 

 

1Gb

 

 

1.8V, QspiNAND

 

 

Yes

 

 

1Gb

 

 

1.8V, QspiNAND, DTR

 

 

Yes

 

 

1Gb

 

 

3V, QspiNAND

 

 

Yes

 

 

2Gb

 

 

1.8V, QspiNAND

 

 

Yes

 

 

2Gb

 

 

1.8V, QspiNAND, DTR

 

 

Yes

 

 

2Gb

 

 

3V, QspiNAND

 

 

Yes

 

 

4Gb

 

 

1.8V, QspiNAND

 

 

-

 

 

4Gb

 

 

3V, QspiNAND

 

 

-

 

SLC NAND Flash Memory

 

Density

 

 

Description

 

 

Automotive

 

 

1Gb

 

 

1.8V, x8, ONFi

 

 

Yes

 

 

1Gb

 

 

3V, x8, ONFi

 

 

Yes

 

 

2Gb

 

 

1.8V, x8, ONFi

 

 

Yes

 

 

2Gb

 

 

3V, x8, ONFi

 

 

Yes

 

 

4Gb

 

 

1.8V, x8, ONFi

 

 

Yes

 

 

4Gb

 

 

3V, x8, ONFi

 

 

Yes

 

 

8Gb

 

 

1.8V, x8, ONFi

 

 

-

 

 

8Gb

 

 

3V, x8, ONFi

 

 

Yes

 

SLC NAND+LPDDR2 MCP

 

Package Ball Out

 

 

SLC NAND: Density

 

 

SLC NAND: I/O

 

 

LPDDR2: Density

 

 

LPDDR2: I/O

 

 

162 (8x10.5x1.0)

 

 

1Gb

 

 

8

 

 

512Mb

 

 

32

 

 

162 (8x10.5x1.0)

 

 

1Gb

 

 

8

 

 

1Gb

 

 

32

 

 

162 (8x10.5x1.0)

 

 

2Gb

 

 

8

 

 

1Gb

 

 

32

 

 

162 (8x10.5x1.0)

 

 

2Gb

 

 

8

 

 

2Gb

 

 

32

 

 

162 (8x10.5x1.0)

 

 

4Gb

 

 

8

 

 

2Gb

 

 

32

 

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