2016-08-03

Everspin Readies Industry's First 256Mb Perpendicular Spin Torque MRAM

Everspin to demonstrate the benefits of its proprietary pMTJ MRAM technology at Flash Memory Summit

Everspin Technologies strengthens its leadership position in MRAM by shipping the world's first product using perpendicular magnetic tunnel junction (pMTJ) based ST-MRAM to customers. This 256Mb DDR3 product is the highest density commercially available perpendicular ST-MRAM in the market.